Samsung said on Thursday that it has begun mass production of double data rate 5 (DDR5) DRAM made using a 12-nanometer (nm) class process node. The tech giant announced the development of 16Gb DDR5 DRAM in December last year.
The start of mass production of 12nm DRAM, making it the most advanced DRAM available, at a time when the memory chip industry is going through a downturn, shows that Samsung, the largest memory chipmaker in the world, seeks to maintain its leadership. in the sector and others.
According to Samsung, the new chip, compared to the previous generation, has reduced power consumption by 23% while its wafer productivity has increased by 20%, which means that 20% more chips are can be made from a wafer because the chip is smaller than the previous generation.
The tech giant said the reduced power consumption from the 16Gb DDR5 DRAM will allow server and data center operators to reduce their energy consumption and carbon footprint.
The chip also has a maximum speed of 7.2Gbps, which means it can process 60GB in almost one second, and is aimed at data centers, AI and new computing applications.
The 12nm node was achieved thanks to Samsung’s use of a new high-k material that allows the chip to accurately detect differences in data signals.
The DRAM was confirmed for compatibility with AMD already in December and Samsung said that it is cooperating with several global IT companies at the moment.